KSC838CYBU
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- Mfr.Part #
- KSC838CYBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.03A TO92-3
- Stock
- 3,654
- In Stock ：
- 3,654
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Current - Collector (Ic) (Max) :
- 30mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 12V
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Frequency - Transition :
- 250MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Base Part Number :
- KSC838
- Power - Max :
- 250mW
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 1mA, 10mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Supplier Device Package :
- TO-92-3
- Datasheets
- KSC838CYBU
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSC838CYBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 2mA 12V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 1mA, 10mA.The product comes in the supplier device package of TO-92-3.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.
KSC838CYBU Features
the DC current gain for this device is 120 @ 2mA 12V
the vce saturation(Max) is 400mV @ 1mA, 10mA
the supplier device package of TO-92-3
KSC838CYBU Applications
There are a lot of ON Semiconductor
KSC838CYBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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