KSC2785YTA
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- Mfr.Part #
- KSC2785YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Short Body
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A TO92S
- Stock
- 49,856
- In Stock ：
- 49,856
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-92S
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Box (TB)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Current - Collector (Ic) (Max) :
- 150mA
- Transistor Type :
- NPN
- Frequency - Transition :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Through Hole
- Power - Max :
- 250mW
- Package / Case :
- TO-226-3, TO-92-3 Short Body
- Datasheets
- KSC2785YTA
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Short Body Tape & Box (TB) Through Hole
KSC2785YTA Overview
In this device, the DC current gain is 120 @ 1mA 6V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.Product comes in the supplier's device package TO-92S.There is a 50V maximal voltage in the device due to collector-emitter breakdown.
KSC2785YTA Features
the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the supplier device package of TO-92S
KSC2785YTA Applications
There are a lot of Rochester Electronics, LLC
KSC2785YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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