KSC2682OS
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- Mfr.Part #
- KSC2682OS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 180V 0.1A TO126-3
- Stock
- 17,474
- In Stock ：
- 17,474
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- KSC2682
- Transistor Type :
- NPN
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 180V
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-225AA, TO-126-3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Frequency - Transition :
- 200MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 5V
- Supplier Device Package :
- TO-126-3
- Current - Collector (Ic) (Max) :
- 100mA
- Power - Max :
- 1.2W
- Datasheets
- KSC2682OS
NPN 150°C TJ 1μA ICBO TO-225AA, TO-126-3 Bulk Through Hole
KSC2682OS Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 50mA.This product comes in a TO-126-3 device package from the supplier.Device displays Collector Emitter Breakdown (180V maximal voltage).
KSC2682OS Features
the DC current gain for this device is 100 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the supplier device package of TO-126-3
KSC2682OS Applications
There are a lot of ON Semiconductor
KSC2682OS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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