KSC2669OBU

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Mfr.Part #
KSC2669OBU
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Short Body
Datasheet
Download
Description
TRANS NPN 30V 0.03A TO92S
Stock
18,263
In Stock :
18,263

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Power - Max :
200mW
Pin Count :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
70 @ 2mA 12V
Transistor Application :
AMPLIFIER
Vce Saturation (Max) @ Ib, Ic :
400mV @ 1mA, 10mA
Transition Frequency :
250MHz
Package / Case :
TO-226-3, TO-92-3 Short Body
Configuration :
Single
Number of Elements :
1
Current - Collector Cutoff (Max) :
100nA ICBO
Packaging :
Bulk
Qualification Status :
COMMERCIAL
Mounting Type :
Through Hole
Number of Terminations :
3
Terminal Position :
Single
Transistor Element Material :
SILICON
Current - Collector (Ic) (Max) :
30mA
Polarity/Channel Type :
NPN
Transistor Type :
NPN
RoHS Status :
ROHS3 Compliant
Frequency - Transition :
250MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reach Compliance Code :
Unknown
Surface Mount :
No
Operating Temperature :
150°C TJ
JESD-30 Code :
R-PSIP-T3
Voltage - Collector Emitter Breakdown (Max) :
30V
Datasheets
KSC2669OBU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSC2669OBU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 Short Body, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:150°C TJ, KSC2669OBU pinout, KSC2669OBU datasheet PDF, KSC2669OBU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSC2669OBU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSC2669OBU


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Short Body Bulk Through Hole

KSC2669OBU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 70 @ 2mA 12V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 1mA, 10mA.A transition frequency of 250MHz is present in the part.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.

KSC2669OBU Features


the DC current gain for this device is 70 @ 2mA 12V
the vce saturation(Max) is 400mV @ 1mA, 10mA
a transition frequency of 250MHz


KSC2669OBU Applications


There are a lot of Rochester Electronics, LLC
KSC2669OBU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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