KSC2500BTA
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- Mfr.Part #
- KSC2500BTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 10V 2A TO92-3
- Stock
- 37,848
- In Stock ：
- 37,848
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- KSC2500
- Packaging :
- Tape and Box (TB)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Operating Temperature :
- 150°C TJ
- Voltage - Collector Emitter Breakdown (Max) :
- 10V
- Transistor Type :
- NPN
- Power - Max :
- 900mW
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 2A
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current - Collector (Ic) (Max) :
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 1V
- Frequency - Transition :
- 150MHz
- Supplier Device Package :
- TO-92-3
- Datasheets
- KSC2500BTA
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
KSC2500BTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 2A.The product comes in the supplier device package of TO-92-3.A 10V maximal voltage - Collector Emitter Breakdown is present in the device.
KSC2500BTA Features
the DC current gain for this device is 200 @ 500mA 1V
the vce saturation(Max) is 500mV @ 50mA, 2A
the supplier device package of TO-92-3
KSC2500BTA Applications
There are a lot of ON Semiconductor
KSC2500BTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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