KSC2330ABU
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- Mfr.Part #
- KSC2330ABU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.1A TO92-3
- Stock
- 47,636
- In Stock ：
- 47,636
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- Current - Collector (Ic) (Max) :
- 100mA
- Supplier Device Package :
- TO-92-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA 10V
- Base Part Number :
- KSC2330
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Power - Max :
- 1W
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 50MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- KSC2330ABU
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
KSC2330ABU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 20mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 1mA, 10mA.This product comes in a TO-92-3 device package from the supplier.Device displays Collector Emitter Breakdown (400V maximal voltage).
KSC2330ABU Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 1mA, 10mA
the supplier device package of TO-92-3
KSC2330ABU Applications
There are a lot of ON Semiconductor
KSC2330ABU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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