KSC2316YTA
- Mfr.Part #
- KSC2316YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 120V 0.8A TO92-3
- Stock
- 98,495
- In Stock :
- 98,495
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Box (TB)
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 120V
- Max Breakdown Voltage :
- 120V
- Lead Free :
- Lead Free
- Max Collector Current :
- 800mA
- Collector Emitter Breakdown Voltage :
- 120V
- Number of Elements :
- 1
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Terminal Position :
- BOTTOM
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 120MHz
- Voltage - Rated DC :
- 120V
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- hFE Min :
- 80
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 900mW
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 120V
- Transistor Application :
- AMPLIFIER
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Factory Lead Time :
- 6 Weeks
- Gain Bandwidth Product :
- 120MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 5V
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 900mW
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Base Part Number :
- KSC2316
- Collector Emitter Saturation Voltage :
- 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current Rating :
- 800mA
- Weight :
- 371.1027mg
- REACH SVHC :
- No SVHC
- Frequency :
- 120MHz
- Transistor Type :
- NPN
- Datasheets
- KSC2316YTA
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
KSC2316YTA Overview
This device has a DC current gain of 120 @ 100mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 800mA.In this part, there is a transition frequency of 120MHz.As a result, it can handle voltages as low as 120V volts.The maximum collector current is 800mA volts.
KSC2316YTA Features
the DC current gain for this device is 120 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 120MHz
KSC2316YTA Applications
There are a lot of ON Semiconductor
KSC2316YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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