KSC2310YNBU
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- Mfr.Part #
- KSC2310YNBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 150V 0.05A TO92-3
- Stock
- 35,015
- In Stock ：
- 35,015
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 50mA
- Base Part Number :
- KSC2310
- Voltage - Collector Emitter Breakdown (Max) :
- 150V
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 10mA 5V
- Supplier Device Package :
- TO-92-3
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Frequency - Transition :
- 100MHz
- Power - Max :
- 800mW
- Transistor Type :
- NPN
- Datasheets
- KSC2310YNBU
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
KSC2310YNBU Overview
In this device, the DC current gain is 120 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 1mA, 10mA.Supplier device package TO-92-3 comes with the product.The device exhibits a collector-emitter breakdown at 150V.
KSC2310YNBU Features
the DC current gain for this device is 120 @ 10mA 5V
the vce saturation(Max) is 500mV @ 1mA, 10mA
the supplier device package of TO-92-3
KSC2310YNBU Applications
There are a lot of ON Semiconductor
KSC2310YNBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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