KSA733GTA
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- Mfr.Part #
- KSA733GTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A TO92-3
- Stock
- 2,908
- In Stock ：
- 2,908
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1mA 6V
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- -180mV
- Packaging :
- Tape and Box (TB)
- ECCN Code :
- EAR99
- Width :
- 3.86mm
- Max Breakdown Voltage :
- 50V
- Power Dissipation :
- 250mW
- Number of Elements :
- 1
- Voltage - Rated DC :
- -50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2002
- Terminal Position :
- BOTTOM
- Weight :
- 240mg
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Current Rating :
- -150mA
- Max Collector Current :
- 150mA
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Base Part Number :
- KSA733
- Length :
- 4.58mm
- Frequency :
- 180MHz
- Height :
- 4.58mm
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 50V
- Gain Bandwidth Product :
- 180MHz
- Collector Base Voltage (VCBO) :
- -60V
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 250mW
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 180MHz
- Collector Emitter Breakdown Voltage :
- 50V
- hFE Min :
- 40
- REACH SVHC :
- No SVHC
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- yes
- Datasheets
- KSA733GTA
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSA733GTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 1mA 6V.With a collector emitter saturation voltage of -180mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 100mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -150mA.A transition frequency of 180MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 150mA volts at its maximum.
KSA733GTA Features
the DC current gain for this device is 40 @ 1mA 6V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -150mA
a transition frequency of 180MHz
KSA733GTA Applications
There are a lot of ON Semiconductor
KSA733GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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