KSA733GBU
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- Mfr.Part #
- KSA733GBU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A TO92-3
- Stock
- 21,187
- In Stock ：
- 21,187
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Terminations :
- 3
- Weight :
- 179mg
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 150mA
- Mount :
- Through Hole
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- ECCN Code :
- EAR99
- Power Dissipation :
- 250mW
- Element Configuration :
- Single
- Length :
- 4.58mm
- Base Part Number :
- KSA733
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Transition Frequency :
- 180MHz
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Elements :
- 1
- Factory Lead Time :
- 2 Weeks
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2002
- hFE Min :
- 40
- Collector Emitter Saturation Voltage :
- -180mV
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- -60V
- Gain Bandwidth Product :
- 180MHz
- Width :
- 3.86mm
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Through Hole
- Height :
- 4.58mm
- Pbfree Code :
- yes
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 250mW
- Current Rating :
- -150mA
- Transistor Type :
- PNP
- Frequency :
- 180MHz
- Voltage - Rated DC :
- -50V
- JESD-609 Code :
- e3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Datasheets
- KSA733GBU
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSA733GBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1mA 6V.With a collector emitter saturation voltage of -180mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 100mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -150mA.A transition frequency of 180MHz is present in the part.Collector current can be as low as 150mA volts at its maximum.
KSA733GBU Features
the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -150mA
a transition frequency of 180MHz
KSA733GBU Applications
There are a lot of ON Semiconductor
KSA733GBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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