KSA733CGBU
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- Mfr.Part #
- KSA733CGBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A TO92-3
- Stock
- 32,624
- In Stock ：
- 32,624
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 250mW
- Number of Pins :
- 3
- Max Collector Current :
- 150mA
- Emitter Base Voltage (VEBO) :
- -5V
- Published :
- 2002
- Width :
- 3.86mm
- Height :
- 4.58mm
- Collector Base Voltage (VCBO) :
- -60V
- Operating Temperature :
- 150°C TJ
- Frequency :
- 180MHz
- Voltage - Rated DC :
- -50V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Length :
- 4.58mm
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 50V
- Power Dissipation :
- 250mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transition Frequency :
- 180MHz
- Factory Lead Time :
- 2 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 180MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Packaging :
- Bulk
- Collector Emitter Saturation Voltage :
- -180mV
- hFE Min :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Weight :
- 179mg
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Current Rating :
- -150mA
- Base Part Number :
- KSA733
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Datasheets
- KSA733CGBU
,TO-226_straightlead.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSA733CGBU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 1mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -180mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 10mA, 100mA.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -150mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 180MHz.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
KSA733CGBU Features
the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -150mA
a transition frequency of 180MHz
KSA733CGBU Applications
There are a lot of ON Semiconductor
KSA733CGBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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