KSA473YTU
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- Mfr.Part #
- KSA473YTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 3A TO220-3
- Stock
- 2,974
- In Stock ：
- 2,974
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- Base Part Number :
- KSA473
- Length :
- 10.67mm
- Factory Lead Time :
- 2 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 1.8g
- Terminal Finish :
- Tin (Sn)
- Published :
- 2007
- Width :
- 4.83mm
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 70
- Max Collector Current :
- 3A
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- -5V
- Radiation Hardening :
- No
- Power Dissipation :
- 10W
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Power Dissipation :
- 10W
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Saturation Voltage :
- -300mV
- Number of Pins :
- 3
- Packaging :
- Tube
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- -30V
- Polarity/Channel Type :
- PNP
- Frequency :
- 100MHz
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Height :
- 9.4mm
- Voltage - Rated DC :
- -30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 2V
- Package / Case :
- TO-220-3
- Element Configuration :
- Single
- Mount :
- Through Hole
- Current Rating :
- -3A
- Datasheets
- KSA473YTU
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
KSA473YTU Overview
In this device, the DC current gain is 120 @ 500mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 200mA, 2A.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
KSA473YTU Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 100MHz
KSA473YTU Applications
There are a lot of ON Semiconductor
KSA473YTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| KSA473YTSTUA | onsemi | 2,175 | TRANS PNP 30V 3A TO220-3 |
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