KSA473YTU
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- Mfr.Part #
- KSA473YTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 3A TO220-3
- Stock
- 2,974
- In Stock ：
- 2,974
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- KSA473
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- -300mV
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- -5V
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-220-3
- Number of Elements :
- 1
- Voltage - Rated DC :
- -30V
- hFE Min :
- 70
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 2V
- Frequency :
- 100MHz
- Transistor Type :
- PNP
- Packaging :
- Tube
- Collector Base Voltage (VCBO) :
- -30V
- JESD-609 Code :
- e3
- Length :
- 10.67mm
- Height :
- 9.4mm
- Power Dissipation :
- 10W
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 100MHz
- Weight :
- 1.8g
- Transition Frequency :
- 100MHz
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 30V
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- JEDEC-95 Code :
- TO-220AB
- Factory Lead Time :
- 2 Weeks
- Published :
- 2007
- Number of Pins :
- 3
- Max Collector Current :
- 3A
- Element Configuration :
- Single
- Current Rating :
- -3A
- Max Power Dissipation :
- 10W
- Width :
- 4.83mm
- Polarity/Channel Type :
- PNP
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 30V
- Datasheets
- KSA473YTU
KSA473YTU Documents
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
KSA473YTU Overview
In this device, the DC current gain is 120 @ 500mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 200mA, 2A.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
KSA473YTU Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 100MHz
KSA473YTU Applications
There are a lot of ON Semiconductor
KSA473YTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
| KSA473O | onsemi | 11,726 | TRANS PNP 30V 3A TO220-3 |
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| KSA473OTU | onsemi | 25,517 | TRANS PNP 30V 3A TO220-3 |
| KSA473Y | onsemi | 34,306 | TRANS PNP 30V 3A TO220-3 |
| KSA473YTSTU | onsemi | 21,590 | TRANS PNP 30V 3A TO220-3 |
| KSA473YTSTUA | onsemi | 2,175 | TRANS PNP 30V 3A TO220-3 |
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