KSA3010RTU

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Mfr.Part #
KSA3010RTU
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
TRANS PNP 120V 6A TO3P
Stock
18,923
In Stock :
18,923

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Power - Max :
60W
Package / Case :
TO-3P-3, SC-65-3
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 500mA, 5A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector (Ic) (Max) :
6A
Packaging :
Tube
Transistor Type :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
55 @ 1A 5V
Voltage - Collector Emitter Breakdown (Max) :
120V
Frequency - Transition :
30MHz
Mounting Type :
Through Hole
Operating Temperature :
150°C TJ
Supplier Device Package :
TO-3P
Current - Collector Cutoff (Max) :
10μA ICBO
Datasheets
KSA3010RTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSA3010RTU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3, SC-65-3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, KSA3010RTU pinout, KSA3010RTU datasheet PDF, KSA3010RTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSA3010RTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSA3010RTU


PNP 150°C TJ 10μA ICBO TO-3P-3, SC-65-3 Tube Through Hole

KSA3010RTU Overview


This device has a DC current gain of 55 @ 1A 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 2.5V @ 500mA, 5A means Ic has reached its maximum value(saturated).Product package TO-3P comes from the supplier.Collector Emitter Breakdown occurs at 120VV - Maximum voltage.

KSA3010RTU Features


the DC current gain for this device is 55 @ 1A 5V
the vce saturation(Max) is 2.5V @ 500mA, 5A
the supplier device package of TO-3P


KSA3010RTU Applications


There are a lot of ON Semiconductor
KSA3010RTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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