JANTXV2N930
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- Mfr.Part #
- JANTXV2N930
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.03A TO18
- Stock
- 42,138
- In Stock ：
- 42,138
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- No
- RoHS Status :
- Non-RoHS Compliant
- Terminal Form :
- Wire
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500μA, 10mA
- Contact Plating :
- Lead, Tin
- Transistor Type :
- NPN
- Transition Frequency :
- 30MHz
- Reference Standard :
- MIL-19500/253H
- Packaging :
- Bulk
- HTS Code :
- 8541.21.00.95
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Series :
- Military, MIL-PRF-19500/253
- Collector Emitter Voltage (VCEO) :
- 1V
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 30mA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector Cutoff (Max) :
- 2nA
- ECCN Code :
- EAR99
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Pin Count :
- 3
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 300mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e0
- Qualification Status :
- Qualified
- Collector Base Voltage (VCBO) :
- 60V
- Configuration :
- Single
- Published :
- 2002
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10μA 5V
- Terminal Position :
- BOTTOM
- Power - Max :
- 300mW
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~200°C TJ
- JESD-30 Code :
- O-MBCY-W3
- Factory Lead Time :
- 23 Weeks
- Mount :
- Through Hole
- Datasheets
- JANTXV2N930
NPN -55°C~200°C TJ 2nA 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JANTXV2N930 Overview
In this device, the DC current gain is 100 @ 10μA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 500μA, 10mA.30MHz is present in the transition frequency.Maximum collector currents can be below 30mA volts.
JANTXV2N930 Features
the DC current gain for this device is 100 @ 10μA 5V
the vce saturation(Max) is 1V @ 500μA, 10mA
a transition frequency of 30MHz
JANTXV2N930 Applications
There are a lot of Microsemi Corporation
JANTXV2N930 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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