JANTXV2N930
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- Mfr.Part #
- JANTXV2N930
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.03A TO18
- Stock
- 42,138
- In Stock ：
- 42,138
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500μA, 10mA
- Transistor Element Material :
- SILICON
- Contact Plating :
- Lead, Tin
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Configuration :
- Single
- Packaging :
- Bulk
- Power - Max :
- 300mW
- Collector Emitter Voltage (VCEO) :
- 1V
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 2nA
- Pbfree Code :
- No
- ECCN Code :
- EAR99
- Qualification Status :
- Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transition Frequency :
- 30MHz
- Factory Lead Time :
- 23 Weeks
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Terminal Position :
- BOTTOM
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Base Voltage (VCBO) :
- 60V
- Series :
- Military, MIL-PRF-19500/253
- Reference Standard :
- MIL-19500/253H
- Terminal Form :
- Wire
- Operating Temperature :
- -55°C~200°C TJ
- Transistor Type :
- NPN
- Published :
- 2002
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10μA 5V
- Max Power Dissipation :
- 300mW
- Mounting Type :
- Through Hole
- JESD-30 Code :
- O-MBCY-W3
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- RoHS Status :
- Non-RoHS Compliant
- HTS Code :
- 8541.21.00.95
- Max Collector Current :
- 30mA
- Mount :
- Through Hole
- JESD-609 Code :
- e0
- Datasheets
- JANTXV2N930
NPN -55°C~200°C TJ 2nA 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JANTXV2N930 Overview
In this device, the DC current gain is 100 @ 10μA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 500μA, 10mA.30MHz is present in the transition frequency.Maximum collector currents can be below 30mA volts.
JANTXV2N930 Features
the DC current gain for this device is 100 @ 10μA 5V
the vce saturation(Max) is 1V @ 500μA, 10mA
a transition frequency of 30MHz
JANTXV2N930 Applications
There are a lot of Microsemi Corporation
JANTXV2N930 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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