JANTXV2N918UB
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- Mfr.Part #
- JANTXV2N918UB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.05A UB
- Stock
- 5,685
- In Stock ：
- 5,685
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- RoHS Status :
- Non-RoHS Compliant
- Series :
- Military, MIL-PRF-19500/301
- Factory Lead Time :
- 23 Weeks
- Pbfree Code :
- No
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector-Base Capacitance-Max :
- 3pF
- Max Power Dissipation :
- 200mW
- Package / Case :
- 3-SMD, No Lead
- Qualification Status :
- Qualified
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Contact Plating :
- Lead, Tin
- Transistor Element Material :
- SILICON
- Reference Standard :
- MIL-19500/301H
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -65°C~200°C TJ
- Current - Collector (Ic) (Max) :
- 50mA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 3mA 1V
- Pin Count :
- 3
- HTS Code :
- 8541.21.00.95
- Published :
- 2007
- Packaging :
- Bulk
- Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 1mA, 10mA
- JESD-30 Code :
- R-CDSO-N3
- Number of Elements :
- 1
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 15V
- Collector Base Voltage (VCBO) :
- 30V
- Mounting Type :
- Surface Mount
- Highest Frequency Band :
- ULTRA HIGH FREQUENCY B
- Max Collector Current :
- 50mA
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Datasheets
- JANTXV2N918UB
NPN -65°C~200°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, No Lead Bulk Surface Mount
JANTXV2N918UB Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 3mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 1mA, 10mA.During maximum operation, collector current can be as low as 50mA volts.
JANTXV2N918UB Features
the DC current gain for this device is 20 @ 3mA 1V
the vce saturation(Max) is 400mV @ 1mA, 10mA
JANTXV2N918UB Applications
There are a lot of Microsemi Corporation
JANTXV2N918UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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