JANTXV2N7371
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- Mfr.Part #
- JANTXV2N7371
- Manufacturer
- Microchip Technology
- Package / Case
- TO-254-3, TO-254AA (Straight Leads)
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 12A TO254AA
- Stock
- 27,802
- In Stock ：
- 27,802
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-254-3, TO-254AA (Straight Leads)
- Polarity :
- PNP
- Current - Collector Cutoff (Max) :
- 1mA
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 3V
- Max Collector Current :
- 12A
- Power - Max :
- 100W
- Operating Temperature :
- -65°C~200°C TJ
- Case Connection :
- Isolated
- Mount :
- Through Hole
- Terminal Form :
- PIN/PEG
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- RoHS Status :
- Non-RoHS Compliant
- Factory Lead Time :
- 36 Weeks
- Element Configuration :
- Single
- JESD-30 Code :
- S-MSFM-P3
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 120mA, 12A
- Pbfree Code :
- No
- Published :
- 2002
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 6A 3V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Voltage (VCEO) :
- 100V
- Qualification Status :
- Qualified
- Series :
- Military, MIL-PRF-19500/623
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Type :
- PNP - Darlington
- ECCN Code :
- EAR99
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Datasheets
- JANTXV2N7371
PNP - Darlington -65°C~200°C TJ 1mA 1 Elements 3 Terminations SILICON TO-254-3, TO-254AA (Straight Leads) Bulk Through Hole
JANTXV2N7371 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 6A 3V DC current gain.As it features a collector emitter saturation voltage of 3V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 12A volts.
JANTXV2N7371 Features
the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
JANTXV2N7371 Applications
There are a lot of Microsemi Corporation
JANTXV2N7371 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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