JANTXV2N7370
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- Mfr.Part #
- JANTXV2N7370
- Manufacturer
- Microchip Technology
- Package / Case
- TO-254-3, TO-254AA (Straight Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 12A TO254AA
- Stock
- 12,311
- In Stock ：
- 12,311
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Pbfree Code :
- No
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e0
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 1mA
- Qualification Status :
- Qualified
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 120mA, 12A
- Operating Temperature :
- -65°C~200°C TJ
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Power - Max :
- 100W
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Emitter Saturation Voltage :
- 3V
- JESD-30 Code :
- S-MSFM-P3
- Mount :
- Through Hole
- Current - Collector (Ic) (Max) :
- 12A
- Case Connection :
- Isolated
- Published :
- 2002
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 6A 3V
- RoHS Status :
- Non-RoHS Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Through Hole
- Series :
- Military, MIL-PRF-19500/624
- Transistor Type :
- NPN - Darlington
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Elements :
- 1
- Package / Case :
- TO-254-3, TO-254AA (Straight Leads)
- Collector Base Voltage (VCBO) :
- 100V
- Terminal Form :
- PIN/PEG
- Number of Terminations :
- 3
- Packaging :
- Bulk
- Polarity :
- NPN
- Datasheets
- JANTXV2N7370
NPN - Darlington -65°C~200°C TJ 1mA 1 Elements 3 Terminations SILICON TO-254-3, TO-254AA (Straight Leads) Bulk Through Hole
JANTXV2N7370 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 6A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 3V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 120mA, 12A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.
JANTXV2N7370 Features
the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
JANTXV2N7370 Applications
There are a lot of Microsemi Corporation
JANTXV2N7370 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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