JANTXV2N7370
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- Mfr.Part #
- JANTXV2N7370
- Manufacturer
- Microchip Technology
- Package / Case
- TO-254-3, TO-254AA (Straight Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 12A TO254AA
- Stock
- 12,311
- In Stock ：
- 12,311
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 12A
- Operating Temperature :
- -65°C~200°C TJ
- Series :
- Military, MIL-PRF-19500/624
- Mount :
- Through Hole
- Transistor Type :
- NPN - Darlington
- Packaging :
- Bulk
- Radiation Hardening :
- No
- JESD-30 Code :
- S-MSFM-P3
- Collector Emitter Saturation Voltage :
- 3V
- JESD-609 Code :
- e0
- Published :
- 2002
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Case Connection :
- Isolated
- Package / Case :
- TO-254-3, TO-254AA (Straight Leads)
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Qualification Status :
- Qualified
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Transistor Application :
- SWITCHING
- Pbfree Code :
- No
- Polarity :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 6A 3V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 1mA
- Collector Base Voltage (VCBO) :
- 100V
- Terminal Form :
- PIN/PEG
- Number of Terminations :
- 3
- Power - Max :
- 100W
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 120mA, 12A
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- JANTXV2N7370
NPN - Darlington -65°C~200°C TJ 1mA 1 Elements 3 Terminations SILICON TO-254-3, TO-254AA (Straight Leads) Bulk Through Hole
JANTXV2N7370 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 6A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 3V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 120mA, 12A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.
JANTXV2N7370 Features
the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
JANTXV2N7370 Applications
There are a lot of Microsemi Corporation
JANTXV2N7370 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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