JANTXV2N6384

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Mfr.Part #
JANTXV2N6384
Manufacturer
Microchip Technology
Package / Case
TO-204AA, TO-3
Datasheet
Download
Description
TRANS NPN DARL 60V 10A TO204AA
Stock
21,286
In Stock :
21,286

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Packaging :
Bulk
Lifecycle Status :
IN PRODUCTION (Last Updated: 3 weeks ago)
Collector Emitter Saturation Voltage :
2V
Terminal Form :
PIN/PEG
JESD-609 Code :
e0
Qualification Status :
Qualified
Number of Elements :
1
Number of Terminations :
2
Polarity :
NPN
Terminal Position :
BOTTOM
Series :
Military, MIL-PRF-19500/523
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 5A 3V
Terminal Finish :
Tin/Lead (Sn/Pb)
Current - Collector Cutoff (Max) :
1mA
Case Connection :
COLLECTOR
Power - Max :
6W
Collector Base Voltage (VCBO) :
60V
Vce Saturation (Max) @ Ib, Ic :
3V @ 100mA, 10A
Transistor Type :
NPN - Darlington
RoHS Status :
Non-RoHS Compliant
JESD-30 Code :
O-MBFM-P2
Collector Emitter Voltage (VCEO) :
60V
Operating Temperature :
-55°C~175°C TJ
ECCN Code :
EAR99
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Current - Collector (Ic) (Max) :
10A
Factory Lead Time :
20 Weeks
Package / Case :
TO-204AA, TO-3
Contact Plating :
Lead, Tin
Published :
2002
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Emitter Base Voltage (VEBO) :
5V
Pin Count :
2
Pbfree Code :
No
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
JANTXV2N6384
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JANTXV2N6384 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Package / Case:TO-204AA, TO-3, JANTXV2N6384 pinout, JANTXV2N6384 datasheet PDF, JANTXV2N6384 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JANTXV2N6384 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN - Darlington -55°C~175°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Bulk Through Hole

JANTXV2N6384 Overview


DC current gain in this device equals 1000 @ 5A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 100mA, 10A.An emitter's base voltage can be kept at 5V to gain high efficiency.

JANTXV2N6384 Features


the DC current gain for this device is 1000 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V


JANTXV2N6384 Applications


There are a lot of Microsemi Corporation
JANTXV2N6384 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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