JANTXV2N6351
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- Mfr.Part #
- JANTXV2N6351
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AC, TO-33-4 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN DARL 150V 5A TO33
- Stock
- 17,137
- In Stock ：
- 17,137
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Turn On Time-Max (ton) :
- 500ns
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Factory Lead Time :
- 20 Weeks
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 12V
- Current - Collector (Ic) (Max) :
- 5A
- Number of Terminations :
- 4
- Pbfree Code :
- No
- Transistor Type :
- NPN - Darlington
- Operating Temperature :
- -65°C~200°C TJ
- Packaging :
- Bulk
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 150V
- Qualification Status :
- Qualified
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 5V
- Power - Max :
- 1W
- Package / Case :
- TO-205AC, TO-33-4 Metal Can
- Series :
- Military, MIL-PRF-19500/472
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Terminal Form :
- Wire
- Published :
- 2007
- Collector Emitter Saturation Voltage :
- 2.5V
- Pin Count :
- 4
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 10mA, 5A
- Number of Pins :
- 4
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 150V
- Polarity :
- NPN
- Case Connection :
- COLLECTOR
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Datasheets
- JANTXV2N6351
NPN - Darlington -65°C~200°C TJ 1 Elements 4 Terminations SILICON TO-205AC, TO-33-4 Metal Can Bulk Through Hole
JANTXV2N6351 Overview
This device has a DC current gain of 1000 @ 5A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 10mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.
JANTXV2N6351 Features
the DC current gain for this device is 1000 @ 5A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 10mA, 5A
the emitter base voltage is kept at 12V
JANTXV2N6351 Applications
There are a lot of Microsemi Corporation
JANTXV2N6351 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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