JANTXV2N6350
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- Mfr.Part #
- JANTXV2N6350
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AC, TO-33-4 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 5A TO33
- Stock
- 48,924
- In Stock ：
- 48,924
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Polarity :
- NPN
- Pbfree Code :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 5A 5V
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 1.5V
- RoHS Status :
- Non-RoHS Compliant
- Pin Count :
- 4
- Case Connection :
- COLLECTOR
- Published :
- 2002
- Qualification Status :
- Qualified
- Packaging :
- Bulk
- JESD-609 Code :
- e0
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Terminal Form :
- Wire
- Collector Base Voltage (VCBO) :
- 80V
- Current - Collector (Ic) (Max) :
- 5A
- Series :
- Military, MIL-PRF-19500/472
- Number of Terminations :
- 4
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-205AC, TO-33-4 Metal Can
- Turn On Time-Max (ton) :
- 500ns
- Power - Max :
- 1W
- Mount :
- Through Hole
- Transistor Type :
- NPN - Darlington
- Factory Lead Time :
- 20 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 5mA, 5A
- Element Configuration :
- Single
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Operating Temperature :
- -65°C~200°C TJ
- Emitter Base Voltage (VEBO) :
- 12V
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Elements :
- 1
- Number of Pins :
- 4
- Mounting Type :
- Through Hole
- Datasheets
- JANTXV2N6350
NPN - Darlington -65°C~200°C TJ 1 Elements 4 Terminations SILICON TO-205AC, TO-33-4 Metal Can Bulk Through Hole
JANTXV2N6350 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 2000 @ 5A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 5mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 12V.
JANTXV2N6350 Features
the DC current gain for this device is 2000 @ 5A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 5mA, 5A
the emitter base voltage is kept at 12V
JANTXV2N6350 Applications
There are a lot of Microsemi Corporation
JANTXV2N6350 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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