JANTXV2N6301
- Mfr.Part #
- JANTXV2N6301
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 8A TO66
- Stock
- 6
- In Stock :
- 6
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Military, MIL-PRF-19500/539
- Pbfree Code :
- No
- ECCN Code :
- EAR99
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 20 Weeks
- RoHS Status :
- Non-RoHS Compliant
- Contact Plating :
- Lead, Tin
- Element Configuration :
- Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transition Frequency :
- 4MHz
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 4A 3V
- Number of Terminations :
- 2
- Qualification Status :
- Qualified
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Type :
- PNP - Darlington
- JESD-609 Code :
- e0
- Pin Count :
- 3
- Power - Max :
- 75W
- Max Collector Current :
- 8A
- Collector Emitter Voltage (VCEO) :
- 80V
- Terminal Form :
- PIN/PEG
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 2V
- Case Connection :
- COLLECTOR
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Published :
- 2007
- Operating Temperature :
- -55°C~200°C TJ
- Mounting Type :
- Through Hole
- Polarity :
- NPN
- Current - Collector Cutoff (Max) :
- 500μA
- Package / Case :
- TO-213AA, TO-66-2
- JESD-30 Code :
- O-MBFM-P2
- Packaging :
- Bulk
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 80mA, 8A
- Datasheets
- JANTXV2N6301

PNP - Darlington -55°C~200°C TJ 500μA 1 Elements 2 Terminations SILICON TO-213AA, TO-66-2 Bulk Through Hole
JANTXV2N6301 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 4A 3V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 4MHz in the part.When collector current reaches its maximum, it can reach 8A volts.
JANTXV2N6301 Features
the DC current gain for this device is 750 @ 4A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 80mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 4MHz
JANTXV2N6301 Applications
There are a lot of Microsemi Corporation
JANTXV2N6301 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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