JANTXV2N6283
- Mfr.Part #
- JANTXV2N6283
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 20A TO204AA
- Stock
- 40,176
- In Stock :
- 40,176
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-204AA, TO-3
- JESD-30 Code :
- O-MBFM-P2
- Mount :
- Through Hole
- Power - Max :
- 175W
- Number of Elements :
- 1
- Terminal Form :
- PIN/PEG
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 20 Weeks
- Operating Temperature :
- -65°C~200°C TJ
- Packaging :
- Bulk
- Polarity :
- NPN
- JESD-609 Code :
- e0
- Case Connection :
- COLLECTOR
- Qualification Status :
- Qualified
- Element Configuration :
- Single
- Pin Count :
- 2
- Transition Frequency :
- 4MHz
- Series :
- Military, MIL-PRF-19500/504
- ECCN Code :
- EAR99
- Terminal Position :
- BOTTOM
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 200mA, 20A
- Transistor Type :
- NPN - Darlington
- Number of Terminations :
- 2
- Contact Plating :
- Lead, Tin
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Base Voltage (VCBO) :
- 80V
- Current - Collector (Ic) (Max) :
- 20A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1250 @ 10A 3V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 3V
- RoHS Status :
- Non-RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 80V
- Pbfree Code :
- No
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 1mA
- Datasheets
- JANTXV2N6283
NPN - Darlington -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Bulk Through Hole
JANTXV2N6283 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1250 @ 10A 3V DC current gain.As it features a collector emitter saturation voltage of 3V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 4MHz in the part.
JANTXV2N6283 Features
the DC current gain for this device is 1250 @ 10A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 7V
a transition frequency of 4MHz
JANTXV2N6283 Applications
There are a lot of Microsemi Corporation
JANTXV2N6283 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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