JANTXV2N6059
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- Mfr.Part #
- JANTXV2N6059
- Manufacturer
- Microchip Technology
- Package / Case
- TO-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 12A TO3
- Stock
- 44,647
- In Stock ：
- 44,647
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 100V
- Qualification Status :
- Qualified
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 6A 3V
- JEDEC-95 Code :
- TO-204AA
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN - Darlington
- Series :
- Military, MIL-PRF-19500/502
- Number of Elements :
- 1
- Terminal Form :
- PIN/PEG
- ECCN Code :
- EAR99
- RoHS Status :
- Non-RoHS Compliant
- Polarity :
- NPN
- Transistor Application :
- AMPLIFIER
- Case Connection :
- COLLECTOR
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Saturation Voltage :
- 3V
- Contact Plating :
- Lead, Tin
- Power - Max :
- 150W
- Element Configuration :
- Single
- JESD-609 Code :
- e0
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- O-MBFM-P2
- Package / Case :
- TO-3
- Terminal Position :
- BOTTOM
- Pbfree Code :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 120mA, 12A
- Factory Lead Time :
- 20 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Collector Base Voltage (VCBO) :
- 100V
- Pin Count :
- 2
- Current - Collector Cutoff (Max) :
- 1mA
- Current - Collector (Ic) (Max) :
- 12A
- Number of Terminations :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Bulk
- Datasheets
- JANTXV2N6059
NPN - Darlington -55°C~175°C TJ 1mA 1 Elements 2 Terminations SILICON TO-3 Bulk Through Hole
JANTXV2N6059 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 6A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 3V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 120mA, 12A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.
JANTXV2N6059 Features
the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
JANTXV2N6059 Applications
There are a lot of Microsemi Corporation
JANTXV2N6059 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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