JANTXV2N5794

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Arrays

Qualification Status :

Qualified

Radiation Hardening :

No

Mounting Type :

Through Hole

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM

Max Collector Current :

600mA

Turn On Time-Max (ton) :

45ns

Current - Collector Cutoff (Max) :

10μA ICBO

Polarity :

NPN

JESD-30 Code :

O-MBCY-W8

Power Dissipation :

600mW

Number of Terminations :

8

Package / Case :

TO-78-6 Metal Can

Transistor Type :

2 NPN (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Terminal Form :

Wire

Published :

2003

Transition Frequency :

250MHz

Collector Emitter Voltage (VCEO) :

40V

JESD-609 Code :

e0

Number of Elements :

2

Max Power Dissipation :

600mW

Series :

Military, MIL-PRF-19500/495

Collector Base Voltage (VCBO) :

75V

Packaging :

Bulk

Mount :

Through Hole

Turn Off Time-Max (toff) :

310ns

Operating Temperature :

-65°C~200°C TJ

Reference Standard :

MIL-19500/495D

Vce Saturation (Max) @ Ib, Ic :

900mV @ 30mA, 300mA

Pbfree Code :

No

RoHS Status :

Non-RoHS Compliant

Lifecycle Status :

IN PRODUCTION (Last Updated: 4 weeks ago)

Number of Pins :

6

Emitter Base Voltage (VEBO) :

6V

Factory Lead Time :

23 Weeks

Pin Count :

4

Terminal Finish :

Tin/Lead (Sn/Pb)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)