JANTXV2N5793A
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- Mfr.Part #
- JANTXV2N5793A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-78-6 Metal Can
- Datasheet
- Download
- Description
- NPN TRANSISTOR
- Stock
- 3,153
- In Stock ：
- 3,153
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Product Status :
- Active
- Package / Case :
- TO-78-6 Metal Can
- Mounting Type :
- Through Hole
- Transistor Type :
- 2 NPN (Dual)
- Package :
- Bulk
- Current - Collector (Ic) (Max) :
- 600mA
- Supplier Device Package :
- TO-78-6
- Base Product Number :
- 2N5793
- RoHS :
- N
- Series :
- Military, MIL-PRF-19500/495
- Transistor Polarity :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA, 10V
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 30mA, 300mA
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Frequency - Transition :
- -
- Power - Max :
- 600mW
- Current - Collector Cutoff (Max) :
- 10μA (ICBO)
- Datasheets
- JANTXV2N5793A
2 NPN (Dual) -65°C ~ 200°C (TJ) 10µA (ICBO) TO-78-6 Metal Can Bulk Through Hole
JANTXV2N5793A Overview
This device has a DC current gain of 40 @ 150mA, 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 900mV @ 30mA, 300mA means Ic has reached its maximum value(saturated).Product package TO-78-6 comes from the supplier.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.
JANTXV2N5793A Features
the DC current gain for this device is 40 @ 150mA, 10V
the vce saturation(Max) is 900mV @ 30mA, 300mA
the supplier device package of TO-78-6
JANTXV2N5793A Applications
There are a lot of Microchip
JANTXV2N5793A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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