JANTXV2N5686
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- Mfr.Part #
- JANTXV2N5686
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AE
- Datasheet
- Download
- Description
- TRANS NPN 80V 50A TO3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 300W
- Radiation Hardening :
- No
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 25A 2V
- Max Collector Current :
- 50A
- ECCN Code :
- EAR99
- RoHS Status :
- Non-RoHS Compliant
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN
- Power Dissipation :
- 300W
- Number of Terminations :
- 2
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Series :
- Military, MIL-PRF-19500/464
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 10A, 50A
- Number of Pins :
- 3
- Transition Frequency :
- 2MHz
- Pin Count :
- 2
- Terminal Form :
- PIN/PEG
- Published :
- 2007
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Pbfree Code :
- No
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~200°C TJ
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- JESD-30 Code :
- O-MBFM-P2
- Mount :
- Through Hole
- Package / Case :
- TO-204AE
- JEDEC-95 Code :
- TO-204AA
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 500μA
- Packaging :
- Bulk
- Collector Emitter Voltage (VCEO) :
- 80V
- Qualification Status :
- Qualified
- JESD-609 Code :
- e0
- Terminal Position :
- BOTTOM
- Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 80V
- Datasheets
- JANTXV2N5686
NPN -55°C~200°C TJ 500μA 1 Elements 2 Terminations SILICON NPN TO-204AE Bulk Through Hole
JANTXV2N5686 Overview
DC current gain in this device equals 15 @ 25A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 5V @ 10A, 50A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 2MHz.In extreme cases, the collector current can be as low as 50A volts.
JANTXV2N5686 Features
the DC current gain for this device is 15 @ 25A 2V
the vce saturation(Max) is 5V @ 10A, 50A
the emitter base voltage is kept at 5V
a transition frequency of 2MHz
JANTXV2N5686 Applications
There are a lot of Microsemi Corporation
JANTXV2N5686 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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