JANTXV2N5680
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- Mfr.Part #
- JANTXV2N5680
- Manufacturer
- MACOM Technology Solutions
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 120V 1A TO39
- Stock
- 56
- In Stock ：
- 56
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- Manufacturer :
- MACOM Technology Solutions
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~200°C TJ
- Power Dissipation :
- 1W
- Factory Lead Time :
- 20 Weeks
- Max Power Dissipation :
- 1W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Terminal Form :
- Wire
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Qualification Status :
- Qualified
- RoHS Status :
- Non-RoHS Compliant
- Max Collector Current :
- 1A
- Configuration :
- Single
- Contact Plating :
- Lead, Tin
- Number of Pins :
- 3
- Published :
- 2002
- Series :
- Military, MIL-PRF-19500/582
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 250mA 2V
- Transistor Type :
- PNP
- Transition Frequency :
- 30MHz
- Mount :
- Through Hole
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 120V
- Emitter Base Voltage (VEBO) :
- 4V
- JESD-609 Code :
- e0
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 10μA
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Collector Emitter Voltage (VCEO) :
- 120V
- Pbfree Code :
- No
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- PNP
- Packaging :
- Bulk
- Datasheets
- JANTXV2N5680
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N5680 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 250mA 2V.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4V can achieve high levels of efficiency.In the part, the transition frequency is 30MHz.A maximum collector current of 1A volts can be achieved.
JANTXV2N5680 Features
the DC current gain for this device is 40 @ 250mA 2V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 4V
a transition frequency of 30MHz
JANTXV2N5680 Applications
There are a lot of Microsemi Corporation
JANTXV2N5680 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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