JANTXV2N5416U4

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Mfr.Part #
JANTXV2N5416U4
Manufacturer
Microchip Technology
Package / Case
3-SMD, No Lead
Datasheet
Download
Description
TRANS PNP 300V 1A U4
Stock
7,370
In Stock :
7,370

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Surface Mount :
yes
Transistor Type :
PNP
Power - Max :
1W
Current - Collector Cutoff (Max) :
1mA
Mounting Type :
Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 50mA 10V
Lifecycle Status :
IN PRODUCTION (Last Updated: 3 weeks ago)
Configuration :
Single
JESD-609 Code :
e4
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pbfree Code :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
Military, MIL-PRF-19500/485
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Polarity/Channel Type :
PNP
RoHS Status :
Non-RoHS Compliant
Packaging :
Bulk
Current - Collector (Ic) (Max) :
1A
Terminal Finish :
Gold (Au) - with Nickel (Ni) barrier
Operating Temperature :
-65°C~200°C TJ
Voltage - Collector Emitter Breakdown (Max) :
300V
Vce Saturation (Max) @ Ib, Ic :
2V @ 5mA, 50mA
Published :
2007
ECCN Code :
EAR99
Package / Case :
3-SMD, No Lead
Power Dissipation-Max (Abs) :
15W
Qualification Status :
Qualified
Datasheets
JANTXV2N5416U4
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JANTXV2N5416U4 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-65°C~200°C TJ, Package / Case:3-SMD, No Lead, JANTXV2N5416U4 pinout, JANTXV2N5416U4 datasheet PDF, JANTXV2N5416U4 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JANTXV2N5416U4 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -65°C~200°C TJ 1mA PNP 3-SMD, No Lead Bulk Surface Mount

JANTXV2N5416U4 Overview


This device has a DC current gain of 30 @ 50mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 2V @ 5mA, 50mA means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 300VV - Maximum voltage.

JANTXV2N5416U4 Features


the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA


JANTXV2N5416U4 Applications


There are a lot of Microsemi Corporation
JANTXV2N5416U4 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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