JANTXV2N5416S
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- Mfr.Part #
- JANTXV2N5416S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 300V 1A TO39
- Stock
- 13,050
- In Stock ：
- 13,050
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Power Dissipation :
- 750mW
- Packaging :
- Bulk
- Operating Temperature :
- -65°C~200°C TJ
- Current - Collector Cutoff (Max) :
- 1mA
- Configuration :
- Single
- Series :
- Military, MIL-PRF-19500/485
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA 10V
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e0
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Max Collector Current :
- 1A
- Number of Terminations :
- 4
- Terminal Form :
- Wire
- RoHS Status :
- Non-RoHS Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Position :
- BOTTOM
- Lead Free :
- Contains Lead
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 350V
- Qualification Status :
- Qualified
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- O-MBCY-W4
- Max Power Dissipation :
- 750mW
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Pbfree Code :
- No
- JEDEC-95 Code :
- TO-5
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 5mA, 50mA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Voltage (VCEO) :
- 300V
- Transistor Type :
- PNP
- Published :
- 2007
- Factory Lead Time :
- 20 Weeks
- Datasheets
- JANTXV2N5416S
PNP -65°C~200°C TJ 1mA 1 Elements 4 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N5416S Overview
In this device, the DC current gain is 30 @ 50mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 5mA, 50mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JANTXV2N5416S Features
the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 6V
JANTXV2N5416S Applications
There are a lot of Microsemi Corporation
JANTXV2N5416S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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