JANTXV2N5154
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- Mfr.Part #
- JANTXV2N5154
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 2A TO39
- Stock
- 28,837
- In Stock ：
- 28,837
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5.5V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Voltage (VCEO) :
- 80V
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e0
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Power Dissipation :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 2.5A 5V
- Number of Terminations :
- 3
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Collector Base Voltage (VCBO) :
- 100V
- Mount :
- Through Hole
- Terminal Form :
- Wire
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- RoHS Status :
- Non-RoHS Compliant
- Number of Elements :
- 1
- Series :
- Military, MIL-PRF-19500/544
- JEDEC-95 Code :
- TO-5
- Published :
- 2007
- Operating Temperature :
- -65°C~200°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 5A
- Qualification Status :
- Qualified
- Max Collector Current :
- 2A
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Radiation Hardening :
- No
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 50μA
- Number of Pins :
- 3
- Reference Standard :
- MIL
- Factory Lead Time :
- 20 Weeks
- Packaging :
- Bulk
- Max Power Dissipation :
- 1W
- Datasheets
- JANTXV2N5154
NPN -65°C~200°C TJ 50μA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N5154 Overview
This device has a DC current gain of 70 @ 2.5A 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5.5V to achieve high efficiency.The maximum collector current is 2A volts.
JANTXV2N5154 Features
the DC current gain for this device is 70 @ 2.5A 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the emitter base voltage is kept at 5.5V
JANTXV2N5154 Applications
There are a lot of Microsemi Corporation
JANTXV2N5154 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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