JANTXV2N5153L
- Mfr.Part #
- JANTXV2N5153L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 80V 2A TO5
- Stock
- 35
- In Stock :
- 35
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 20 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 2.5A 5V
- Series :
- Military, MIL-PRF-19500/545
- Configuration :
- Single
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Mounting Type :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Terminal Form :
- Wire
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5.5V
- Turn On Time-Max (ton) :
- 500ns
- Current - Collector Cutoff (Max) :
- 50μA
- Transition Frequency :
- 70MHz
- Pin Count :
- 3
- Operating Temperature :
- -65°C~200°C TJ
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 5A
- Number of Pins :
- 3
- Power Dissipation :
- 1W
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 1W
- Max Collector Current :
- 2A
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Published :
- 2007
- Collector Base Voltage (VCBO) :
- 100V
- Pbfree Code :
- No
- JESD-609 Code :
- e0
- Transistor Application :
- SWITCHING
- Qualification Status :
- Qualified
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Datasheets
- JANTXV2N5153L

PNP -65°C~200°C TJ 50μA 1 Elements 3 Terminations SILICON PNP TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANTXV2N5153L Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 70 @ 2.5A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 500mA, 5A.If the emitter base voltage is kept at 5.5V, a high level of efficiency can be achieved.A transition frequency of 70MHz is present in the part.Collector current can be as low as 2A volts at its maximum.
JANTXV2N5153L Features
the DC current gain for this device is 70 @ 2.5A 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the emitter base voltage is kept at 5.5V
a transition frequency of 70MHz
JANTXV2N5153L Applications
There are a lot of Microsemi Corporation
JANTXV2N5153L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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