JANTXV2N5013S
- Mfr.Part #
- JANTXV2N5013S
- Manufacturer
- Microsemi
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 800V 0.2A TO39
- Stock
- 4,461
- In Stock :
- 4,461
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 800V
- Radiation Hardening :
- No
- Current - Collector (Ic) (Max) :
- 200mA
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Series :
- Military, MIL-PRF-19500/727
- Power - Max :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 20mA 10V
- Lifecycle Status :
- OBSOLETE (Last Updated: 3 weeks ago)
- Published :
- 2007
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Number of Pins :
- 3
- Operating Temperature :
- -65°C~200°C TJ
- Min Operating Temperature :
- -65°C
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 800V
- Max Operating Temperature :
- 200°C
- Packaging :
- Bulk
- Supplier Device Package :
- TO-39 (TO-205AD)
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Max Power Dissipation :
- 1W
- RoHS Status :
- Non-RoHS Compliant
- Max Collector Current :
- 200mA
- Datasheets
- JANTXV2N5013S

NPN -65°C~200°C TJ 10nA ICBO TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N5013S Overview
This device has a DC current gain of 30 @ 20mA 10V, which is the ratio between the base current and the collector current.Product package TO-39 (TO-205AD) comes from the supplier.Collector Emitter Breakdown occurs at 800VV - Maximum voltage.A maximum collector current of 200mA volts is possible.
JANTXV2N5013S Features
the DC current gain for this device is 30 @ 20mA 10V
the supplier device package of TO-39 (TO-205AD)
JANTXV2N5013S Applications
There are a lot of Microsemi Corporation
JANTXV2N5013S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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