JANTXV2N4237
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- Mfr.Part #
- JANTXV2N4237
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 40V 1A TO39
- Stock
- 45,478
- In Stock ：
- 45,478
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Max Power Dissipation :
- 1W
- Mounting Type :
- Through Hole
- Power Dissipation :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Radiation Hardening :
- No
- RoHS Status :
- Non-RoHS Compliant
- Pbfree Code :
- No
- Published :
- 2002
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Mount :
- Through Hole
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Terminal Form :
- Wire
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 1A
- Configuration :
- Single
- Series :
- Military, MIL-PRF-19500/581
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 3
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -65°C~200°C TJ
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 50V
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 250mA 1V
- Factory Lead Time :
- 20 Weeks
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Qualification Status :
- Qualified
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Elements :
- 1
- Transition Frequency :
- 1MHz
- Datasheets
- JANTXV2N4237
NPN -65°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N4237 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 250mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 100mA, 1A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 1MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
JANTXV2N4237 Features
the DC current gain for this device is 30 @ 250mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 1MHz
JANTXV2N4237 Applications
There are a lot of Microsemi Corporation
JANTXV2N4237 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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