JANTXV2N3999
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- Mfr.Part #
- JANTXV2N3999
- Manufacturer
- Microchip Technology
- Package / Case
- TO-210AA, TO-59-4, Stud
- Datasheet
- Download
- Description
- TRANS NPN 80V 10A TO59
- Stock
- 8,098
- In Stock ：
- 8,098
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-210AA, TO-59-4, Stud
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- JESD-30 Code :
- O-MUPM-X3
- Pin Count :
- 4
- Power Dissipation :
- 2W
- Terminal Position :
- UPPER
- Current - Collector (Ic) (Max) :
- 10A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A 2V
- RoHS Status :
- Non-RoHS Compliant
- Qualification Status :
- Qualified
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 8V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Packaging :
- Bulk
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Series :
- Military, MIL-PRF-19500/374
- Current - Collector Cutoff (Max) :
- 10μA
- JESD-609 Code :
- e0
- Mount :
- Stud
- Factory Lead Time :
- 20 Weeks
- Collector Emitter Voltage (VCEO) :
- 80V
- Pbfree Code :
- No
- Published :
- 2007
- Operating Temperature :
- -65°C~200°C TJ
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 500mA, 5A
- Number of Pins :
- 4
- Max Collector Current :
- 5A
- Max Power Dissipation :
- 2W
- Collector Base Voltage (VCBO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Terminal Form :
- UNSPECIFIED
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Mounting Type :
- Chassis, Stud Mount
- Datasheets
- JANTXV2N3999
NPN -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-210AA, TO-59-4, Stud Bulk Chassis, Stud Mount
JANTXV2N3999 Overview
This device has a DC current gain of 80 @ 1A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 2V @ 500mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.A maximum collector current of 5A volts is possible.
JANTXV2N3999 Features
the DC current gain for this device is 80 @ 1A 2V
the vce saturation(Max) is 2V @ 500mA, 5A
the emitter base voltage is kept at 8V
JANTXV2N3999 Applications
There are a lot of Microsemi Corporation
JANTXV2N3999 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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