JANTXV2N3811U

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Package / Case :

TO-78-6 Metal Can

Radiation Hardening :

No

Polarity :

PNP

RoHS Status :

Non-RoHS Compliant

Collector Emitter Breakdown Voltage :

60V

Power Dissipation :

350mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Emitter Base Voltage (VEBO) :

5V

Terminal Form :

Wire

Number of Elements :

2

Mounting Type :

Through Hole

Transistor Type :

2 PNP (Dual)

JESD-30 Code :

O-MBCY-W8

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1mA 5V

Published :

2007

Number of Terminations :

8

Collector Base Voltage (VCBO) :

60V

Terminal Position :

BOTTOM

Series :

Military, MIL-PRF-19500/336

Max Power Dissipation :

350mW

Terminal Finish :

Tin/Lead (Sn/Pb)

ECCN Code :

EAR99

Mount :

Surface Mount, Through Hole

Packaging :

Bulk

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Operating Temperature :

-65°C~200°C TJ

Pbfree Code :

No

Max Collector Current :

50mA

Collector Emitter Voltage (VCEO) :

60V

JESD-609 Code :

e0

Current - Collector Cutoff (Max) :

10μA ICBO