JANTXV2N3811

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

JESD-609 Code :

e0

Radiation Hardening :

No

Max Power Dissipation :

350mW

Mount :

Through Hole

Terminal Form :

Wire

Package / Case :

TO-78-6 Metal Can

Power Dissipation :

350mW

Number of Terminations :

6

Mounting Type :

Through Hole

Packaging :

Bulk

Series :

Military, MIL-PRF-19500/336

Collector Emitter Voltage (VCEO) :

60V

ECCN Code :

EAR99

Pin Count :

8

Terminal Position :

BOTTOM

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

60V

Collector Emitter Breakdown Voltage :

60V

Polarity :

PNP

Transistor Type :

2 PNP (Dual)

Emitter Base Voltage (VEBO) :

5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1mA 5V

RoHS Status :

Non-RoHS Compliant

Terminal Finish :

TIN LEAD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2007

Current - Collector Cutoff (Max) :

10μA ICBO

Pbfree Code :

No

Number of Pins :

6

Operating Temperature :

-65°C~200°C TJ

Number of Elements :

2

Max Collector Current :

50mA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA