JANTXV2N3767P
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- Mfr.Part #
- JANTXV2N3767P
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 36,437
- In Stock ：
- 36,437
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Product Status :
- Active
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 100mA, 1A
- Current - Collector Cutoff (Max) :
- 500μA
- Frequency - Transition :
- -
- Brand :
- Microchip / Microsemi
- RoHS :
- N
- Package :
- Bulk
- Manufacturer :
- Microchip
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Mounting Type :
- Through Hole
- Series :
- -
- Subcategory :
- Transistors
- Supplier Device Package :
- TO-66 (TO-213AA)
- Package / Case :
- TO-213AA, TO-66-2
- Product Type :
- BJTs - Bipolar Transistors
- Operating Temperature :
- -65°C ~ 200°C
- Power - Max :
- 25 W
- Current - Collector (Ic) (Max) :
- 4 A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA, 5V
- Product Category :
- Bipolar Transistors - BJT
- Transistor Type :
- NPN
- Datasheets
- JANTXV2N3767P
NPN -65°C ~ 200°C 500μA TO-213AA, TO-66-2 Through Hole
JANTXV2N3767P Overview
In this device, the DC current gain is 40 @ 500mA, 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 100mA, 1A.Supplier device package TO-66 (TO-213AA) comes with the product.The device exhibits a collector-emitter breakdown at 80 V.
JANTXV2N3767P Features
the DC current gain for this device is 40 @ 500mA, 5V
the vce saturation(Max) is 2.5V @ 100mA, 1A
the supplier device package of TO-66 (TO-213AA)
JANTXV2N3767P Applications
There are a lot of Microchip Technology
JANTXV2N3767P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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