JANTXV2N3749
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- Mfr.Part #
- JANTXV2N3749
- Manufacturer
- Microchip Technology
- Package / Case
- TO-111-4, Stud
- Datasheet
- Download
- Description
- TRANS NPN 80V 5A TO111
- Stock
- 25,192
- In Stock ：
- 25,192
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e0
- Factory Lead Time :
- 20 Weeks
- Operating Temperature :
- -65°C~200°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Max Power Dissipation :
- 2W
- Collector Emitter Voltage (VCEO) :
- 80V
- ECCN Code :
- EAR99
- Max Collector Current :
- 5A
- Collector Base Voltage (VCBO) :
- 110V
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 8V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 5A
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Stud
- Number of Elements :
- 1
- Packaging :
- Bulk
- Series :
- Military, MIL-PRF-19500/315
- Current - Collector Cutoff (Max) :
- 20μA
- Case Connection :
- Isolated
- Package / Case :
- TO-111-4, Stud
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Terminal Form :
- UNSPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1A 2V
- Mounting Type :
- Stud Mount
- Published :
- 2004
- Polarity/Channel Type :
- PNP
- JEDEC-95 Code :
- TO-59
- Configuration :
- Single
- Terminal Position :
- UPPER
- Transistor Type :
- NPN
- Pbfree Code :
- No
- Qualification Status :
- Qualified
- Power Dissipation :
- 2W
- Datasheets
- JANTXV2N3749
NPN -65°C~200°C TJ 20μA 1 Elements 3 Terminations SILICON PNP TO-111-4, Stud Bulk Stud Mount
JANTXV2N3749 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 500mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 8V.During maximum operation, collector current can be as low as 5A volts.
JANTXV2N3749 Features
the DC current gain for this device is 40 @ 1A 2V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the emitter base voltage is kept at 8V
JANTXV2N3749 Applications
There are a lot of Microsemi Corporation
JANTXV2N3749 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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