JANTXV2N3741
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- Mfr.Part #
- JANTXV2N3741
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS PNP 80V 4A TO66
- Stock
- 48,357
- In Stock ：
- 48,357
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 4A
- Number of Elements :
- 1
- Published :
- 2002
- Series :
- Military, MIL-PRF-19500/441
- Emitter Base Voltage (VEBO) :
- 7V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 125mA, 1A
- Number of Pins :
- 3
- RoHS Status :
- Non-RoHS Compliant
- JESD-30 Code :
- O-MBFM-P2
- Transistor Element Material :
- SILICON
- Terminal Form :
- PIN/PEG
- Mount :
- Through Hole
- Number of Terminations :
- 2
- Current - Collector Cutoff (Max) :
- 10μA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 80V
- Qualification Status :
- Qualified
- Package / Case :
- TO-213AA, TO-66-2
- Packaging :
- Bulk
- Transistor Type :
- PNP
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- JESD-609 Code :
- e0
- Pbfree Code :
- No
- Power Dissipation :
- 25W
- Configuration :
- Single
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 250mA 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 2
- Operating Temperature :
- -65°C~200°C TJ
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 80V
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 25W
- Case Connection :
- COLLECTOR
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 10 Weeks
- Datasheets
- JANTXV2N3741
PNP -65°C~200°C TJ 10μA 1 Elements 2 Terminations SILICON PNP TO-213AA, TO-66-2 Bulk Through Hole
JANTXV2N3741 Overview
This device has a DC current gain of 30 @ 250mA 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.The maximum collector current is 4A volts.
JANTXV2N3741 Features
the DC current gain for this device is 30 @ 250mA 1V
the vce saturation(Max) is 600mV @ 125mA, 1A
the emitter base voltage is kept at 7V
JANTXV2N3741 Applications
There are a lot of Microsemi Corporation
JANTXV2N3741 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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