JANTXV2N3740
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- Mfr.Part #
- JANTXV2N3740
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS PNP 60V 4A TO66
- Stock
- 22,536
- In Stock ：
- 22,536
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- PIN/PEG
- Series :
- Military, MIL-PRF-19500/441
- Max Collector Current :
- 4A
- Pin Count :
- 2
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- JESD-30 Code :
- O-MBFM-P2
- Published :
- 2007
- Current - Collector Cutoff (Max) :
- 10μA
- Mount :
- Through Hole
- Max Power Dissipation :
- 25W
- Collector Base Voltage (VCBO) :
- 60V
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 250mA 1V
- Power - Max :
- 25W
- ECCN Code :
- EAR99
- Configuration :
- Single
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~200°C TJ
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Reference Standard :
- MIL-19500/441
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 125mA, 1A
- Pbfree Code :
- No
- Number of Terminations :
- 2
- Terminal Position :
- BOTTOM
- HTS Code :
- 8541.29.00.95
- Qualification Status :
- Qualified
- JESD-609 Code :
- e0
- Radiation Hardening :
- No
- Packaging :
- Bulk
- Package / Case :
- TO-213AA, TO-66-2
- Number of Elements :
- 1
- Datasheets
- JANTXV2N3740
PNP -65°C~200°C TJ 10μA 1 Elements 2 Terminations SILICON PNP TO-213AA, TO-66-2 Bulk Through Hole
JANTXV2N3740 Overview
In this device, the DC current gain is 30 @ 250mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 125mA, 1A.Maximum collector currents can be below 4A volts.
JANTXV2N3740 Features
the DC current gain for this device is 30 @ 250mA 1V
the vce saturation(Max) is 600mV @ 125mA, 1A
JANTXV2N3740 Applications
There are a lot of Microsemi Corporation
JANTXV2N3740 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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