JANTXV2N3700
- Mfr.Part #
- JANTXV2N3700
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A TO18
- Stock
- 31,691
- In Stock :
- 31,691
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- Non-RoHS Compliant
- Pin Count :
- 3
- Max Collector Current :
- 1A
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Terminal Position :
- BOTTOM
- Terminal Form :
- Wire
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 80V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 500mW
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 7V
- Power Dissipation :
- 500mW
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 10V
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Pbfree Code :
- No
- Factory Lead Time :
- 23 Weeks
- Published :
- 2007
- Series :
- Military, MIL-PRF-19500/391
- Qualification Status :
- Qualified
- Lead Free :
- Contains Lead
- Collector Base Voltage (VCBO) :
- 140V
- Operating Temperature :
- -65°C~200°C TJ
- Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- JANTXV2N3700
NPN -65°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JANTXV2N3700 Overview
In this device, the DC current gain is 50 @ 500mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JANTXV2N3700 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
JANTXV2N3700 Applications
There are a lot of Microsemi Corporation
JANTXV2N3700 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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