JANTXV2N3637L
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- Mfr.Part #
- JANTXV2N3637L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 175V 1A TO5
- Stock
- 2,783
- In Stock ：
- 2,783
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10μA
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Turn On Time-Max (ton) :
- 200ns
- Published :
- 2007
- Packaging :
- Bulk
- Terminal Form :
- Wire
- Number of Terminations :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Number of Pins :
- 3
- Max Collector Current :
- 1A
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Configuration :
- Single
- HTS Code :
- 8541.29.00.95
- ECCN Code :
- EAR99
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Turn Off Time-Max (toff) :
- 650ns
- Collector Emitter Voltage (VCEO) :
- 175V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Pin Count :
- 3
- Power - Max :
- 1W
- Qualification Status :
- Qualified
- Collector Base Voltage (VCBO) :
- 175V
- Number of Elements :
- 1
- Series :
- Military, MIL-PRF-19500/357
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Pbfree Code :
- No
- Factory Lead Time :
- 23 Weeks
- Max Power Dissipation :
- 1W
- Radiation Hardening :
- No
- JESD-609 Code :
- e0
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Operating Temperature :
- -65°C~200°C TJ
- Datasheets
- JANTXV2N3637L
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANTXV2N3637L Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 50mA.During maximum operation, collector current can be as low as 1A volts.
JANTXV2N3637L Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
JANTXV2N3637L Applications
There are a lot of Microsemi Corporation
JANTXV2N3637L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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