JANTXV2N3637
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- Mfr.Part #
- JANTXV2N3637
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 175V 1A TO39
- Stock
- 27,379
- In Stock ：
- 27,379
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e0
- Number of Terminations :
- 3
- Published :
- 2002
- Pbfree Code :
- No
- Collector Base Voltage (VCBO) :
- 175V
- Radiation Hardening :
- No
- Turn Off Time-Max (toff) :
- 650ns
- Pin Count :
- 2
- Number of Pins :
- 3
- Terminal Form :
- Wire
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- RoHS Status :
- Non-RoHS Compliant
- Transition Frequency :
- 200MHz
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 10μA
- Max Power Dissipation :
- 1W
- Qualification Status :
- Qualified
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Factory Lead Time :
- 23 Weeks
- Packaging :
- Bulk
- Operating Temperature :
- -65°C~200°C TJ
- Mounting Type :
- Through Hole
- Max Collector Current :
- 1A
- Terminal Position :
- BOTTOM
- Series :
- Military, MIL-PRF-19500/357
- Configuration :
- Single
- Number of Elements :
- 1
- Mount :
- Through Hole
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 175V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Power Dissipation :
- 1W
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Turn On Time-Max (ton) :
- 200ns
- Datasheets
- JANTXV2N3637
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N3637 Overview
This device has a DC current gain of 100 @ 50mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 200MHz.The maximum collector current is 1A volts.
JANTXV2N3637 Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
JANTXV2N3637 Applications
There are a lot of Microsemi Corporation
JANTXV2N3637 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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