JANTXV2N3635
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- Mfr.Part #
- JANTXV2N3635
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 140V 1A TO39
- Stock
- 16,622
- In Stock ：
- 16,622
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 23 Weeks
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- JESD-609 Code :
- e0
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Pin Count :
- 3
- Turn On Time-Max (ton) :
- 200ns
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Terminal Position :
- BOTTOM
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- RoHS Status :
- Non-RoHS Compliant
- Current - Collector Cutoff (Max) :
- 10μA
- Configuration :
- Single
- Series :
- Military, MIL-PRF-19500/357
- Number of Elements :
- 1
- Pbfree Code :
- No
- Operating Temperature :
- -65°C~200°C TJ
- Power Dissipation :
- 1W
- Terminal Form :
- Wire
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 140V
- Max Collector Current :
- 1A
- Turn Off Time-Max (toff) :
- 650ns
- Transistor Element Material :
- SILICON
- Qualification Status :
- Qualified
- Collector Emitter Voltage (VCEO) :
- 140V
- Datasheets
- JANTXV2N3635
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANTXV2N3635L Overview
This device has a DC current gain of 100 @ 50mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 600mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 1A volts is possible.
JANTXV2N3635L Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
JANTXV2N3635L Applications
There are a lot of Microsemi Corporation
JANTXV2N3635L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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