JANTXV2N3634
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- Mfr.Part #
- JANTXV2N3634
- Manufacturer
- Microchip Technology
- Package / Case
- TO-39
- Datasheet
- Download
- Description
- TRANS PNP 140V 1A TO39
- Stock
- 35,281
- In Stock ：
- 35,281
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Packaging :
- Bulk
- Published :
- 2007
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 1W
- RoHS Status :
- Non-RoHS Compliant
- Series :
- Military, MIL-PRF-19500/357
- Transistor Type :
- PNP
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 140V
- Factory Lead Time :
- 23 Weeks
- Pbfree Code :
- No
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-39
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 10μA
- Qualification Status :
- Qualified
- Turn On Time-Max (ton) :
- 200ns
- Number of Elements :
- 1
- Mount :
- Through Hole
- JESD-609 Code :
- e0
- ECCN Code :
- EAR99
- Pin Count :
- 2
- Terminal Form :
- Wire
- Configuration :
- Single
- Operating Temperature :
- -65°C~200°C TJ
- Transition Frequency :
- 150MHz
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 50mA 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn Off Time-Max (toff) :
- 650ns
- Collector Base Voltage (VCBO) :
- 140V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Collector Current :
- 1A
- Number of Pins :
- 3
- Datasheets
- JANTXV2N3634
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-39 Bulk Through Hole
JANTXV2N3634 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 50mA 10V.When VCE saturation is 600mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.A maximum collector current of 1A volts can be achieved.
JANTXV2N3634 Features
the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
JANTXV2N3634 Applications
There are a lot of Microsemi Corporation
JANTXV2N3634 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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