JANTXV2N3500L
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- Mfr.Part #
- JANTXV2N3500L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 150V 0.3A TO5
- Stock
- 37,731
- In Stock ：
- 37,731
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 150V
- Mount :
- Through Hole
- Operating Temperature :
- -65°C~200°C TJ
- Qualification Status :
- Qualified
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Wire
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Published :
- 2007
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Number of Pins :
- 3
- Max Collector Current :
- 300mA
- RoHS Status :
- Non-RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Pin Count :
- 3
- Number of Terminations :
- 3
- Turn Off Time-Max (toff) :
- 1150ns
- Polarity/Channel Type :
- NPN
- HTS Code :
- 8541.29.00.95
- Factory Lead Time :
- 23 Weeks
- Pbfree Code :
- No
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 150V
- Configuration :
- Single
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Turn On Time-Max (ton) :
- 115ns
- Transistor Type :
- NPN
- JESD-609 Code :
- e0
- Power - Max :
- 1W
- Number of Elements :
- 1
- Series :
- Military, MIL-PRF-19500/366
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- Datasheets
- JANTXV2N3500L
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANTXV2N3500L Overview
In this device, the DC current gain is 40 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 15mA, 150mA.Single BJT transistor is possible for the collector current to fall as low as 300mA volts at Single BJT transistors maximum.
JANTXV2N3500L Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
JANTXV2N3500L Applications
There are a lot of Microsemi Corporation
JANTXV2N3500L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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