JANTXV2N3467
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- Mfr.Part #
- JANTXV2N3467
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A TO39
- Stock
- 26,124
- In Stock ：
- 26,124
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Terminal Form :
- Wire
- Collector Emitter Voltage (VCEO) :
- 40V
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Operating Temperature :
- -55°C~175°C TJ
- Collector Base Voltage (VCBO) :
- 40V
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 100mA, 1A
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 175MHz
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Published :
- 2007
- Configuration :
- Single
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Turn On Time-Max (ton) :
- 40ns
- RoHS Status :
- Non-RoHS Compliant
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA 1V
- Mount :
- Through Hole
- Pbfree Code :
- No
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Series :
- Military, MIL-PRF-19500/348
- Radiation Hardening :
- No
- Qualification Status :
- Qualified
- Max Collector Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e0
- Pin Count :
- 2
- Turn Off Time-Max (toff) :
- 90ns
- Terminal Position :
- BOTTOM
- Mounting Type :
- Through Hole
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Max Power Dissipation :
- 1W
- Datasheets
- JANTXV2N3467
PNP -55°C~175°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N3467 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 500mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 175MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
JANTXV2N3467 Features
the DC current gain for this device is 40 @ 500mA 1V
the vce saturation(Max) is 1.2V @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 175MHz
JANTXV2N3467 Applications
There are a lot of Microsemi Corporation
JANTXV2N3467 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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