JANTXV2N3439
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- Mfr.Part #
- JANTXV2N3439
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 350V 1A TO39
- Stock
- 39,694
- In Stock ：
- 39,694
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Factory Lead Time :
- 20 Weeks
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA 10V
- Max Power Dissipation :
- 800mW
- Transition Frequency :
- 15MHz
- Mounting Type :
- Through Hole
- Pbfree Code :
- No
- Current - Collector Cutoff (Max) :
- 2µA
- RoHS Status :
- Non-RoHS Compliant
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 350V
- Case Connection :
- COLLECTOR
- Configuration :
- Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Terminal Form :
- Wire
- Pin Count :
- 2
- Collector Base Voltage (VCBO) :
- 450V
- Series :
- Military, MIL-PRF-19500/368
- Max Collector Current :
- 1A
- Power Dissipation :
- 800mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~200°C TJ
- Collector Emitter Breakdown Voltage :
- 350V
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Qualification Status :
- Qualified
- JESD-609 Code :
- e0
- Published :
- 2007
- Lead Free :
- Contains Lead
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Type :
- NPN
- Packaging :
- Bulk
- Datasheets
- JANTXV2N3439
NPN -65°C~200°C TJ 2μA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N3439 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 20mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 4mA, 50mA.The emitter base voltage can be kept at 7V for high efficiency.The part has a transition frequency of 15MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
JANTXV2N3439 Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 15MHz
JANTXV2N3439 Applications
There are a lot of Microsemi Corporation
JANTXV2N3439 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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