JANTXV2N3421
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- Mfr.Part #
- JANTXV2N3421
- Manufacturer
- MACOM Technology Solutions
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 3A TO5
- Stock
- 109
- In Stock ：
- 109
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- Manufacturer :
- MACOM Technology Solutions
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Series :
- Military, MIL-PRF-19500/393
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 5μA
- RoHS Status :
- Non-RoHS Compliant
- Max Power Dissipation :
- 1W
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 1W
- Emitter Base Voltage (VEBO) :
- 8V
- Mount :
- Through Hole
- Factory Lead Time :
- 20 Weeks
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Collector Current :
- 3A
- Transistor Type :
- NPN
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Configuration :
- Single
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C~200°C TJ
- Terminal Form :
- Wire
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 40MHz
- Collector Base Voltage (VCBO) :
- 125V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1A 2V
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e0
- Pbfree Code :
- No
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Qualification Status :
- Qualified
- Datasheets
- JANTXV2N3421
NPN -65°C~200°C TJ 5μA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANTXV2N3421 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.If the emitter base voltage is kept at 8V, a high level of efficiency can be achieved.A transition frequency of 40MHz is present in the part.Collector current can be as low as 3A volts at its maximum.
JANTXV2N3421 Features
the DC current gain for this device is 40 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 8V
a transition frequency of 40MHz
JANTXV2N3421 Applications
There are a lot of Microsemi Corporation
JANTXV2N3421 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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