JANTXV2N3055
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- Mfr.Part #
- JANTXV2N3055
- Manufacturer
- Microchip Technology
- Package / Case
- TO-3
- Datasheet
- Download
- Description
- TRANS NPN 70V 15A TO3
- Stock
- 42,832
- In Stock ：
- 42,832
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Qualification Status :
- Qualified
- Packaging :
- Bulk
- Operating Temperature :
- -65°C~200°C TJ
- Series :
- Military, MIL-PRF-19500/407
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 3.3A, 10A
- Package / Case :
- TO-3
- Terminal Form :
- PIN/PEG
- Pin Count :
- 2
- Terminal Position :
- BOTTOM
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 7V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 6W
- Current - Collector Cutoff (Max) :
- 1mA
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Configuration :
- Single
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 100V
- JESD-30 Code :
- O-MBFM-P2
- Collector Emitter Voltage (VCEO) :
- 70V
- Number of Terminations :
- 2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- Max Power Dissipation :
- 6W
- Radiation Hardening :
- No
- RoHS Status :
- Non-RoHS Compliant
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 15A
- Transition Frequency :
- 2.5MHz
- Terminal Finish :
- TIN LEAD
- ECCN Code :
- EAR99
- Published :
- 2002
- Datasheets
- JANTXV2N3055
NPN -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON NPN TO-3 Bulk Through Hole
JANTXV2N3055 Overview
In this device, the DC current gain is 20 @ 4A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 3.3A, 10A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.2.5MHz is present in the transition frequency.Maximum collector currents can be below 15A volts.
JANTXV2N3055 Features
the DC current gain for this device is 20 @ 4A 4V
the vce saturation(Max) is 2V @ 3.3A, 10A
the emitter base voltage is kept at 7V
a transition frequency of 2.5MHz
JANTXV2N3055 Applications
There are a lot of Microsemi Corporation
JANTXV2N3055 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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